BCR183S
Dec-13-20011
PNP Silicon Digital Transistor Array
BCR183S
Dec-13-20011
PNP Silicon Digital Transistor Array
Specifications
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
1
=10k, R
2
=10k)
VPS05604
6
3
1
5
4
2
EHA07173
654
321
C1B2E2
C2B1E1
1
R
R
2
R
1
R
2
TR1
TR2
TypeMarkingPin ConfigurationPackage
BCR183SWMs1=E12=B13=C24=E25=B26=C1
SOT363
Maximum Ratings
Parameter
SymbolValueUnit
Collector-emitter voltage
V
CEO
50V
Collector-base voltage
V
CBO
50
Emitter-base voltage
V
EBO
10
Input on Voltage
V
i(on)
20
DC collector current
I
C
100mA
Total power dissipation, T
S
= 115 °CP
tot
250mW
Junction temperature
T
j
150°C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
140K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance