BCR185 datasheet pdf

Semiconductor Group 1Nov-27-1996 BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 =10k Ω , R 2 =47k Ω ) TypeMarkingOrdering CodePin ConfigurationPackage BCR 185WNsQ62702-C22631=B2=E3=CSOT-23 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 6 Input on VoltageV i(on) 20 DC collector currentI C 100mA Total power dissipation, T S = 102°CP tot 200mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 350K/W Junction - soldering pointR thJS ≤ 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Specifications