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200 250 mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150
2011-08-30 1 BCR191... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 = 22 kΩ , R 2 = 22 kΩ ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR191 BCR191W EHA07183 3 21 C EB R 1 R 2 TypeMarkingPin ConfigurationPackage BCR191 BCR191W WOs WOs 1=B 1=B 2=E 2=E 3=C 3=C - - - - - - SOT23 SOT323 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Input forward voltageV i(fwd) 60 Input reverse voltageV i(rev) 10 Collector currentI C 100mA Total power dissipation- BCR191, T S ≤ 102°C BCR191W, T S ≤ 124°C P tot
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