BCR191S
Dec-13-20011
PNP Silicon Digital Transistor Array
BCR191S
Dec-13-20011
PNP Silicon Digital Transistor Array
Specifications
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
1
=22k, R
2
=22k)
VPS05604
6
3
1
5
4
2
EHA07173
654
321
C1B2E2
C2B1E1
1
R
R
2
R
1
R
2
TR1
TR2
TypeMarkingPin ConfigurationPackage
BCR191SWOs1=E12=B13=C24=E25=B26=C1
SOT363
Maximum Ratings
Parameter
SymbolValueUnit
Collector-emitter voltage50V
V
CEO
50Collector-base voltage
V
CBO
10
V
EBO
Emitter-base voltage
Input on Voltage
V
i(on)
30
100mADC collector current
I
C
mW
P
tot
250
Total power dissipation, T
S
= 115 °C
Junction temperature150°C
T
j
-65 ... 150Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
140K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance