BCR199 datasheet pdf

250 250 250 mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150

Aug-29-2003 1 BCR199... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 = 47kΩ) BCR199F/L3 BCR199T EHA07180 3 12 BE C 1 R TypeMarkingPin ConfigurationPackage BCR199F* BCR199L3* BCR199T* UBs UB UBs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - - - - - - - TSFP-3 TSLP-3-4 SC75 * Preliminary Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 5 Input on voltageV i(on) 50 Collector currentI C 70mA Total power dissipation- BCR199F, T S ≤ 128°C BCR199L3, T S ≤ 135°C BCR199T, T S ≤ 109°C P tot

Specifications