BCR1AM-12 datasheet pdf

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BCR1AM-12 datasheet pdf

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Feb.1999 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE BCR1AM-12 •IT (RMS)........................................................................ 1A •V DRM....................................................................... 600V •I FGT !, IRGT !, IRGT #............................................. 5mA •I FGT #..................................................................... 10mA Symbol I T (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine full wave 360° conduction, T c=56°C ]4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A 2 s W W V A °C °C g Ratings 1.0 10 0.41 1 0.1 6 1 –40 ~ +125 –40 ~ +125 0.23 Symbol V DRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class 12 600 720 Unit V V MAXIMUM RATINGS ]1. Gate open. TYPE NAME VOLTAGE CLASS 2 1 3 1 2 3 T 1 TERMINAL T 2 TERMINAL GATE TERMINAL φ5.0 MAX 4.4 5.0 MAX 12.5 MIN 3.9 MAX 1.3 1.25 1.25 CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92

Specifications
Feb.1999 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE BCR1AM-12 •IT (RMS)........................................................................ 1A •V DRM....................................................................... 600V •I FGT !, IRGT !, IRGT #............................................. 5mA •I FGT #..................................................................... 10mA Symbol I T (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine full wave 360° conduction, T c=56°C ]4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A 2 s W W V A °C °C g Ratings 1.0 10 0.41 1 0.1 6 1 –40 ~ +125 –40 ~ +125 0.23 Symbol V DRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class 12 600 720 Unit V V MAXIMUM RATINGS ]1. Gate open. TYPE NAME VOLTAGE CLASS 2 1 3 1 2 3 T 1 TERMINAL T 2 TERMINAL GATE TERMINAL φ5.0 MAX 4.4 5.0 MAX 12.5 MIN 3.9 MAX 1.3 1.25 1.25 CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92