T
1 TERMINAL
T
2 TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR20A
φ11 MAX
9 MAX
24 MAX
17.5 MAX
2
Specifications
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
BCR20A, BCR20B, BCR20C, BCR20E
]1. Gate open.
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
ConditionsUnit
A
A
A
2
s
W
W
V
A
°C
°C
Ratings
20
220
203
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
Commercial frequency, sine full
wave, 360° conduction
BCR20A, B, C
BCR20E
T
c=98°C
T
b=64°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
•IT (RMS)...................................................................... 20A
•V
DRM..............................................................400V/500V
•I
FGT !, IRGT !, IRGT #........................................... 30mA
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
]1
Non-repetitive peak off-state voltage
]1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
12
500
700
2
1
3
φ2.0 MIN
1
3
3 MAX
φ8.7 MAX
1
2
3