BCR22PN datasheet pdf

Semiconductor Group 1Nov-26-1996 BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R 1 =22k Ω , R 2 =22k Ω ) Tape loading orientation TypeMarkingOrdering CodePin ConfigurationPackage BCR 22PNWPsQ62702-C23751=E12=B13=C24= E25=B26= C1SOT-363 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 10 Input on VoltageV i(on) 30 DC collector currentI C 100mA Total power dissipation, T S = 115°CP tot 250mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 275K/W Junction - soldering pointR thJS ≤ 140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu

Specifications