BCR39PN datasheet pdf

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BCR39PN datasheet pdf

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BCR39PN Nov-29-20011 NPN/PNP Silicon Digital Transistor Array

BCR39PN Nov-29-20011 NPN/PNP Silicon Digital Transistor Array

Specifications
 Switching circuit, inverter, interface circuit, driver circuit  Two (galvanic) internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R 1 = 22k) Tape loading orientation VPS05604 6 3 1 5 4 2 EHA07193 123 456 W1s Direction of Unreeling Top View Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Position in tape: pin 1 opposite of feed hole side EHA07290 654 321 C1B2E2 C2B1E1 1 R R 1 TR1 TR2 TypeMarkingPin ConfigurationPackage BCR39PNW3s1=E12=B13=C24=E25=B26=C1 SOT363 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage V CEO 50V Collector-base voltage V CBO 50 Emitter-base voltage V EBO 5 Input on Voltage V i(on) 30 DC collector current I C 100mA Total power dissipation, T S = 115 °CP tot 250mW Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS  140K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance