BCR3KM datasheet pdf

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BCR3KM datasheet pdf

Datasheet Information

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Feb.1999 BCR3KM OUTLINE DRAWINGDimensions in mm TO-220FN MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE APPLICATION Control of heater such as electric rice cooker, electric pot l IT (RMS) .................................................................. 3A l VDRM ...................................................... 400V / 600V l IFGT !, IRGT

Specifications
# ................... 15mA (10mA) ]2 l UL Recognized : File No. E80271 ]1. Gate open. IT (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Tstg — V iso Symbol A A A 2 s W W V A °C °C g V 3 30 3.7 3 0.3 6 0.5 –40 ~ +125 –40 ~ +125 2.0 2000 Symbol 8 400 500 V V MAXIMUM RATINGS Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VDRM VDSM RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Parameter Parameter Voltage class Unit Ratings Unit Conditions Commercial frequency, sine full wave 360° conduction, Tc=111°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Á À Â Measurement point of case temperature ] À Á Â T1TERMINAL T 2TERMINAL GATE TERMINAL 15 ± 0.3 14 ± 0.5 10 ± 0.32.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.54 ± 0.252.54 ± 0.25 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.3 3.6 ± 0.3 6.5 ± 0.3 ÀÁÂ E 12 600 720