Feb.1999
BCR3KM
OUTLINE DRAWINGDimensions in mm
TO-220FN
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Control of heater such as electric rice cooker, electric pot
l
IT (RMS)
..................................................................
3A
l
VDRM
......................................................
400V / 600V
l
IFGT !, IRGT
Specifications
#
...................
15mA (10mA)
]2
l
UL Recognized : File No. E80271
]1. Gate open.
IT (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
V
iso
Symbol
A
A
A
2
s
W
W
V
A
°C
°C
g
V
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol
8
400
500
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VDRM
VDSM
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class
Unit
Ratings
Unit
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Repetitive peak off-state voltage
]1
Non-repetitive peak off-state voltage
]1
Á
À
Â
Measurement point of
case temperature
]
À
Á
Â
T1TERMINAL
T
2TERMINAL
GATE TERMINAL
15
±
0.3
14
±
0.5
10 ± 0.32.8 ± 0.2
φ
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6
±
0.2
4.5
±
0.2
0.75 ± 0.15
3
±
0.3
3.6
±
0.3
6.5
±
0.3
ÀÁÂ
E
12
600
720