= 79
°CP
tot
330mW
Junction temperatureT
j
150°C
Storage temperatureT
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 325K/W
Junction - soldering pointR
thJS
≤
215
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Specifications
Semiconductor Group
1Dec-18-1996
BCR 519
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
=4.7k
Ω
)
TypeMarkingOrdering CodePin ConfigurationPackage
BCR 519XKsUPON INQUIRY1 = B2 = E3 = CSOT-23
Maximum Ratings
ParameterSymbolValuesUnit
Collector-emitter voltageV
CEO
50V
Collector-base voltageV
CBO
50
Emitter-base voltageV
EBO
5
Input on VoltageV
i(on)
30
DC collector currentI
C
500mA
Total power dissipation, T
S