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2011-07-28 1 BCR562 1 2 3 PNP Silicon Digital Transistor • Built in bias resistor (R 1 = 4.7 kΩ, R 2 = 4.7 kΩ) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 EHA07183 3 21 C EB R 1 R 2 TypeMarkingPin ConfigurationPackage BCR562XUs 1=B2=E3=C SOT23 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Input forward voltageV i(fwd) 30 Input reverse voltageV i(rev) 10 Collector currentI C 500mA Total power dissipation- T S ≤ 79 °C P tot 330mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Parameter SymbolValueUnit Junction - soldering point 1) R thJS ≤ 215 K/W 1 For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)