BCR583 datasheet pdf

Semiconductor Group 1Nov-27-1996 BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R 1 =10k Ω ,R 2 =10k Ω ) TypeMarkingOrdering CodePin ConfigurationPackage BCR 583XMsQ62702-C23851=B2=E3=CSOT-23 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 50V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 10 Input on VoltageV i(on) 50 DC collector currentI C 500mA Total power dissipation, T S = 79 °CP tot 330mW Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 325K/W Junction - soldering pointR thJS ≤ 215 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Specifications