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Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS APPLICATION Solid state relay, hybrid IC •I T (RMS)........................................................................ 8A •V DRM..............................................................400V/600V •I FGT !, IRGT !, IRGT #......................... 30mA (20mA) ]5 Symbol V DRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class Unit V V MAXIMUM RATINGS 8 400 500 12 600 720 Symbol I T (RMS) ITSM I 2 t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I 2 t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine full wave 360° conduction, T c=105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A 2 s W W V A °C °C g Ratings 8 80 26 5 0.5 10 2 –40 ~ +125 –40 ~ +125 1.2 ]1. Gate open. 231 4 TYPE NAME VOLTAGE CLASS 10.5 MAX 5 1 0.8 4.5 1.3 0.5 3.0 +0.3–0.5 0 +0.3 –0 (1.5) 1.5 MAX 1.5 MAX 8.6±0.3 9.8±0.5 2.6±0.4 4.5 ∗ OUTLINE DRAWING Dimensions in mm TO-220S 24 1 3 1 2 3 4 T 1 TERMINAL T2 TERMINAL GATE TERMINAL T 2 TERMINAL ∗ Measurement point of case temperature