BCU81-SMD datasheet pdf

Prelim.9/98 BCU81-SMD Magnatec.Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk V CBO Collector – Base voltage V CEO Collector – Emitter voltage (I B = 0) V EBO Emitter – Base voltage I C Collector current I CP Collector Current (Pulse) P C Collector Dissipation (Mounted on Ceramic Board (250mm 2 x 0.8mm) T j Junction Temperature T stg Storage Temperature 30V 10V 6V 3A 5A 500mW 1.3W 150°C –55 to 150°C MECHANICAL DATA Dimensions in mm 1.51.6 4.5 2.5 1.0 4.25 max. 1.5 3.0 0.40 0.50 0.40 ECB NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring low loss devices FEATURES •LOW V CE(SAT) • HIGH CURRENT • HIGH ENERGY RATING APPLICATIONS • ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING EFFICIENT LOW LOSS DEVICES SOT89 ABSOLUTE MAXIMUM RATINGS(T case = 25°C unless otherwise stated)

Features

• 1.3W
• 1.51.6
• 4.5
• 2.5
• 1.0
• 4.25 max.
• 1.5
• 3.0
• 0.40
• 0.50
• 0.40
• •LOW V
• • HIGH CURRENT
• • HIGH ENERGY RATING
• • ANY HIGH CURRENT DRIVER