BCU83-SMD datasheet pdf

Magnatec.Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk V CEO Collector – Emitter voltage V CBO Collector – Base voltage V EBO Emitter – Base voltage I C Collector current I C(PK) Peak Collector current P tot Total Dissipation at T case = 25°C T stg Storage Temperature T j Maximum Operating Junction Temperature 20V 60V 6V 5A 8A 0.9W –55 to 150°C 150°C BCU83–SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring low loss devices FEATURES •LOW V CE(SAT) • HIGH CURRENT • HIGH ENERGY RATING APPLICATIONS • ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING EFFICIENT LOW LOSS DEVICES SOT89 ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated) Prelim. 1/94 1.51.6 4.5 2.5 1.0 4.25 max. 1.5 3.0 0.40 0.50 0.40 ECB

Features

• 0.9W
• •LOW V
• • HIGH CURRENT
• • HIGH ENERGY RATING
• • ANY HIGH CURRENT DRIVER
• 1.51.6
• 4.5
• 2.5
• 1.0
• 4.25 max.
• 1.5
• 3.0
• 0.40
• 0.50
• 0.40