BCV26 (1) datasheet pdf

BCV26 PNP Darlington Transistor Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted BCV26 This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. SymbolParameterValueUnits V CEO Collector-Emitter Voltage30V V CBO Collector-Base Voltage40V V EBO Emitter-Base Voltage10V I C Collector Current - Continuous1.2A T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits *BCV26 P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW / ° C R θ JA Thermal Resistance, Junction to Ambient357 ° C/W C B E SOT-23 Mark: FD *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation

Specifications