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BCV26, BCV46 1Jul-13-2001 PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 1 2 3 VPS05161 TypeMarkingPin ConfigurationPackage BCV26 BCV46 FDs FEs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BCV26BCV46 Unit Collector-emitter voltage V CEO 3060V Collector-base voltage V CBO 4080 Emitter-base voltage V EBO 1010 DC collector current I C 500mA Peak collector current I CM 800 Base current100 I B Peak base current I BM 200 Total power dissipation, T S = 74 °CP tot 360mW Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 210K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance