BCV27 (1) datasheet pdf

BCV27 C B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA = 25°C unless otherwise noted BCV27 SymbolParameterValueUnits V CEO Collector-Emitter Voltage30V V CBO C ollector- Bas e Volt age40V V EBO Emitt er-Base Vol tage10V I C Collector Current - Continuous1.2A T J , T stg Oper ating and St orage J uncti on Temperat ure Range-55 to +150 °C SymbolCharacteristicMaxUnits *BCV27 P D Total Device Dissipation D erate above 25°C 350 2.8 mW mW/°C R θ JA Thermal Resist anc e, J uncti on to Ambient357 °C/W SOT-23 Mark: FF *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Discrete POWER & Signal Technologies 1997 Fairchild Semiconductor Corporation

Specifications