30
60
V
Collector-base voltage
BCV29
BCV49
V
CBO
40
80
Emitter-base voltageV
EBO
10
Collector currentI
C
500mA
Peak collector current, t
p
≤ 10 msI
CM
800
Base currentI
B
100
Peak base currentI
BM
200
Total power dissipation-
T
S
≤ 130 °C
P
tot
1W
Junction temperatureT
j
150°C
Storage temperatureT
stg
-65 ... 150
Specifications
2011-10-05
1
BCV29, BCV49
1
2
2
3
NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
TypeMarkingPin ConfigurationPackage
BCV29
BCV49
EF
EG
1=B
1=B
2=C
2=C
3=E
3=E
SOT89
SOT89
Maximum Ratings
Parameter
SymbolValueUnit
Collector-emitter voltage
BCV29
BCV49
V
CEO