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MAXIMUM RATINGS(T A =25∞C) SYMBOLUNITS Collector-Base VoltageV CBO 80V Collector-Emitter VoltageV CEO 60V Emitter-Base VoltageV EBO 10 V Collector CurrentI C 500 mA Peak Collector CurrentI CM 800mA Base CurrentI B 100mA Power DissipationP D 350mW Operating and Storage Junction TemperatureT J ,T stg -65 to +150∞C Thermal ResistanceΘ JA 357∞C/W ELECTRICAL CHARACTERISTICS(T A =25∞C unless otherwise noted) SYMBOLTEST CONDITIONSMINTYPMAXUNITS I CBO V CB =30V100nA I EBO V BE =10V100nA BV CEO I C =10mA60V BV CBO I C =10μA80V BV EBO I E =100nA10V V CE(SAT) I C =100mA, I B = 0.1mA1.0V V BE(SAT) I C =100mA, I B = 0.1mA1.5V h FE V CE =5.0V, I C = 1.0mA2,000 h FE V CE =5.0V, I C = 10mA4,000 h FE V CE =5.0V, I C = 100mA10,000 f T V CE =5.0V, I C = 30mA, f=100MHz 220MHz BCV47 NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R0 ( 07-December 2001) DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. Marking Code is FG.