30
60
V
Collector-base voltage
BCV27
BCV47
V
CBO
40
80
Emitter-base voltageV
EBO
10
Collector currentI
C
500mA
Peak collector currentI
CM
800
Base currentI
B
100
Peak base currentI
BM
200
Total power dissipation-
T
S
≤ 74 °C
P
tot
360mW
Junction temperatureT
j
150°C
Storage temperatureT
stg
-65 ... 150
1
Pb-containing package may be available upon special request
Specifications
2007-04-20
1
BCV27, BCV47
1
2
3
NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV26, BCV46 (PNP)
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
TypeMarkingPin ConfigurationPackage
BCV27
BCV47
FFs
FGs
1=B
1=B
2=E
2=E
3=C
3=C
SOT23
SOT23
Maximum Ratings
Parameter
SymbolValueUnit
Collector-emitter voltage
BCV27
BCV47
V
CEO