BCV49 datasheet pdf

BCV49 datasheet pdf PDF Viewer

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BCV49 datasheet pdf

Datasheet Information

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SOT89 NPN SILICON PLANARDARLINGTON TRANSISTORISSUE 3 – SEPTEMBER 1995COMPLEMENTARY TYPE – BCV48 PARTMARKING DETAILS – EG

Specifications
ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 800 mA Continuous Collector Current I C 500 mA Power Dissipation at T amb =25°C P tot 1W Operating and Storage TemperatureRange T j :T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-BaseBreakdown Voltage V (BR)CBO 80 V I C =100 μ A Collector-EmitterBreakdown Voltage V (BR)CEO 60 V I C =10mA* Emitter-BaseBreakdown Voltage V (BR)EBO 10 V I E =10 μ A Collector Cut-Off Current I CBO 10010 nAμ A V CB =60V V CB =60V, T amb =150°C Emitter Cut-Off Current I EBO 100 nA V EB =4V Collector-EmitterSaturation Voltage V CE(sat) 1VI C =100mA, I B =0.1mA* Base-Emitter Saturation Voltage V BE(sat) 1.5 V I C =100mA, I B =0.1mA* Static Forward CurrentTransfer Ratio h FE 20004000100002000 I C =100 μ A, V CE =1V† I C =10mA, V CE =5V* I C =100mA, V CE =5V* I C =500mA, V CE =5V* Transition Frequency f T 170 MHz I C =50mA, V CE =5V f = 20MHz Output Capacitance C obo 3.5 pF V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width=300 μ s. Duty cycle ≤ 2% For typical graphs see FMMT38A datasheet † Periodic Sample Test Only.Spice parameter data is available upon request for this device BCV49 C C B E SOT89 3 - 26