SOT89 NPN SILICON PLANARDARLINGTON TRANSISTORISSUE 3 – SEPTEMBER 1995COMPLEMENTARY TYPE –
BCV48
PARTMARKING DETAILS –
EG
Specifications
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
800
mA
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25°C
P
tot
1W
Operating and Storage TemperatureRange
T
j
:T
stg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-BaseBreakdown Voltage
V
(BR)CBO
80
V
I
C
=100
μ
A
Collector-EmitterBreakdown Voltage
V
(BR)CEO
60
V
I
C
=10mA*
Emitter-BaseBreakdown Voltage
V
(BR)EBO
10
V
I
E
=10
μ
A
Collector Cut-Off Current
I
CBO
10010
nAμ
A
V
CB
=60V
V
CB
=60V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
100
nA V
EB
=4V
Collector-EmitterSaturation Voltage
V
CE(sat)
1VI
C
=100mA, I
B
=0.1mA*
Base-Emitter Saturation Voltage
V
BE(sat)
1.5
V
I
C
=100mA, I
B
=0.1mA*
Static Forward CurrentTransfer Ratio
h
FE
20004000100002000
I
C
=100
μ
A, V
CE
=1V†
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Transition Frequency
f
T
170
MHz
I
C
=50mA, V
CE
=5V
f = 20MHz
Output Capacitance
C
obo
3.5
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical graphs see FMMT38A datasheet † Periodic Sample Test Only.Spice parameter data is available upon request for this device
BCV49
C
C
B
E
SOT89
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