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2011-10-13 1 BCV61 NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and V BE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 1 2 3 4 EHA00012 C2 (1) Tr.2Tr.1 C1 (2) E1 (3)E2 (4) TypeMarkingPin ConfigurationPackage BCV61B BCV61C 1Ks 1Ls 1 = C2 1 = C2 2 = C1 2 = C1 3 = E1 3 = E1 4 = E2 4 = E2 SOT143 SOT143 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltage (transistor T1) V CEO 30V Collector-base voltage (open emitter) (transistor T1) V CBO 30 Emitter-base voltageV EBS 6 DC collector currentI C 100mA Peak collector current, t p < 10 msI CM 200 Base peak current (transistor T1)I BM 200 Total power dissipation, T S = 99 °CP tot 300mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS ≤170K/W 1 For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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