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Semiconductor Group1 NPN Silicon Double Transistors BCV 61 5.91 Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BCV 61 A BCV 61 B BCV 61 C Q62702-C2155 Q62702-C2156 Q62702-C2157 1Js 1Ks 1Ls SOT-143 ParameterSymbolValuesUnit Collector-emitter voltage (transistor T1) V CE030V Collector-base voltage (open emitter) (transistor T1) VCB030 Junction temperatureTj150 ̊C Total power dissipation,T S≤99 ̊C 2) Ptot300mW Storage temperature rangeT stg– 65 ... + 150 Collector currentIC100mA Emitter-base voltageVEBS6 Collector peak currentICM200 Base peak current (transistor T1)IBM200 Thermal Resistance Junction - ambient 2) Rth JA≤ 240K/W Junction - soldering pointR th JS≤ 170 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm× 1.5 mm/6 cm 2 Cu. Preliminary Data lTo be used as a current mirror lGood thermal coupling andVBE matching lHigh current gain lLow emitter-saturation voltage
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