Loading PDF...
Pages: 4
©2002 Fairchild Semiconductor CorporationRev. B1, August 2002 BCW30 Absolute Maximum Ratings * T C =25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T C =25°C unless otherwise noted Thermal Characteristics T A =25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage-32V V CES Collector-Emitter Voltage-32V V EBO Emitter-Base Voltage-5.0V I C Collector current- Continuous-500mA T J , T stg Junction and Storage Temperature-55 ~ +150°C SymbolParameterTest ConditionMin.Typ.Max.Units Off Characteristics V (BR)CBO Collector-Base Breakdown VoltageI C = -10μA, I E = 0-32V V (BR)CEO Collector-Emitter Breakdown VoltageI C = -2.0mA, I B = 0-32V V (BR)CES Collector-Emitter Breakdown VoltageI C = -10μA, I E = 0-32V V (BR)EBO Emitter-Base Breakdown VoltageI C = -10μA, I C = 0-5.0V I CBO Collector Cutoff CurrentV CB = -32V, I E = 0 V CB = -32V, I E = 0, T A = +100°C -100 -10 nA μA On Characteristics h FE DC Current GainV CE = -5.0V, I C = -2.0mA215500 V CE(sat) Collector-Emitter Saturation VoltageI C = -10mA, I B = -0.5mA-0.3V V BE(on) Base-Emitter On VoltageV CE = -5.0V, I C = -2.0mA-0.6-0.7V Small Signal Characteristics NFNoise FigureV CE = -5.0V, I C = -200μA R S = 2.0kΩ, f = 1.0kHz B W = 200Hz 10dB SymbolParameterMax.Units P D Total Device Dissipation Derate above 25°C 350 2.8 mW mW/°C R θJA Thermal Resistance, Junction to Ambient357°C/W BCW30 PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. 1. Base 2. Emitter 3. Collector 1 2 3 SOT-23 Mark: C2