BCW30LT1 datasheet pdf

 Semiconductor Components Industries, LLC, 1999 November, 1999 – Rev. 0 1Publication Order Number: BCW30LT1/D BCW30LT1 GeneralPurpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector-Emitter VoltageV CEO –32Vdc Collector-Base VoltageV CBO –32Vdc Emitter-Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolValueUnit Total Device Dissipation FR-5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient R θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150 °C (1) FR– 5 = 1.0  0.75 0.062 in. (2) Alumina = 0.4  0.3  0.024 in. 99.5% alumina. DevicePackageShipping ORDERING INFORMATION BCW30LT1SOT–23 http://onsemi.com SOT–23 (TO–236AB) CASE 318 STYLE 6 3000 Units/Rail DEVICE MARKING C2x x = Monthly Date Code 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER

Specifications