BCW30LT1 (2) datasheet pdf

LESHAN RADIO COMPANY, LTD. M7–1/6 1 3 2 General Purpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO –32Vdc Collector–Base VoltageV CBO –32Vdc Emitter–Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW29LT1 = C1; BCW30LT1 = C2 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –2.0mAdc, I E = 0 ) V (BR)CEO –32—Vdc Collector–Emitter Breakdown Voltage (I C = –100 μAdc, V EB = 0) V (BR)CES –32—Vdc Collector–Emitter Breakdown Voltage (I C = –10 μAdc, I C = 0) V (BR)CBO –32—Vdc Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0) V (BR)EBO –5.0—Vdc Collector Cutoff CurrentI CBO (V CB = –32 Vdc, I E = 0 )—–100nAdc (V CB = –32 Vdc, I E = 0, T A = 100°C)—–10μAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW29LT1 BCW30LT1 1 EMITTER 3 COLLECTOR 2 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB)

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