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©2002 Fairchild Semiconductor CorporationRev. A, August 2002 BCW33 Absolute Maximum Ratings * T a =25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a =25°C unless otherwise noted Thermal Characteristics T A =25°C unless otherwise noted Device mounted on FR-4PCB 40mm × 40mm × 1.5mm SymbolParameterValueUnits V CEO Collector-Emitter Voltage32V V CBO Collector-Base Voltage32V V EBO Emitter-Base Voltage5.0V I C Collector current (DC)500mA T J , T stg Operating and Storage Junction Temperature Range-55 ~ +150°C SymbolParameterTest ConditionMin.Typ.Max.Units Off Characteristics V (BR)CBO Collector-Base Breakdown VoltageI C = 2.0mA, I B = 032V V (BR)CEO Collector-Emitter Breakdown VoltageI C = 10μA, I B = 032V V (BR)EBO Emitter-Base Breakdown VoltageI C = 10μA, I C = 05.0V I CBO Collector Cutoff CurrentV CB = 32V, I E = 0 V CB = 32V, I E = 0, T A = 100°C 100 10 nA μA On Characteristics h FE DC Current GainI C = 2.0mA, V CE = 5.0V 420800 V CE(sat) Collector-Emitter Saturation VoltageI C = 10mA, I B = 0.5mA0.25V V BE(on) Base-Emitter On VoltageI C = 2.0mA, V CE = 5.0V0.550.7V Small Signal Characteristics f T Current Gain Bandwidth ProductI C = 2.0mA, V CE = 5.0V f = 35MHz 200 C obo Output CapacitanceV CB = 10V, I E = 0, f = 1.0MHz4.0pF NFNoise FigureI C = 0.2mA, V CE = 5.0V R S = 2.0kΩ, f = 1.0kHz B W = 200Hz 10dB SymbolParameterMax.Units P D Total Device Dissipation Derate above 25°C 350 2.8 mW mW/°C R θJA Thermal Resistance, Junction to Ambient357°C/W BCW33 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 07. 1. Base 2. Emitter 3. Collector 1 2 3 SOT-23 Mark: D3