1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Specifications
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
RatingSymbolValueUnit
Collector – Emitter VoltageV
CEO
20Vdc
Collector – Base VoltageV
CBO
30Vdc
Emitter – Base VoltageV
EBO
5.0Vdc
Collector Current — ContinuousI
C
100mAdc
THERMAL CHARACTERISTICS
CharacteristicSymbolMaxUnit
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
qJA
556°C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
qJA
417°C/W
Junction and Storage TemperatureT
J
, T
stg
– 55 to +150°C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
SymbolMinMaxUnit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
32—Vdc
Collector – Base Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CBO
32—Vdc
Emitter – Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0—Vdc
Collector Cutoff Current
(V
CB
= 32 Vdc, I
E
= 0)
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
—
—
100
10
nAdc
μAdc
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW33LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BCW33LT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER