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LESHAN RADIO COMPANY, LTD. M8–1/6 1 3 2 General Purpose Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO 20Vdc Collector–Base VoltageV CBO 30Vdc Emitter–Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW33LT1 = D3 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 2.0mAdc, I B = 0 ) V (BR)CEO 32—Vdc Collector–Base Breakdown Voltage (I C = 10 μAdc, I B = 0) V (BR)CBO 32—Vdc Emitter–Base Breakdown Voltage (I E = 10 μAdc, I C = 0) V (BR)EBO 5.0—Vdc Collector Cutoff CurrentI CBO (V CB = 32 Vdc, I E = 0 )—100nAdc (V CB = 32 Vdc, I E = 0, T A = 100°C)—10μAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW33LT1 2 EMITTER 3 COLLECTOR 1 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB)