BCW61BLT1 datasheet pdf

General Purpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO –32Vdc Collector – Base VoltageV CBO –32Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient R qJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance Junction to Ambient R qJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = –2.0 mAdc, I B = 0) V (BR)CEO –32—Vdc Emitter – Base Breakdown Voltage (I E = –1.0 mAdc, I C = 0) V (BR)EBO –5.0—Vdc Collector Cutoff Current (V CE = –32 Vdc) (V CE = –32 Vdc, T A = 150°C) I CES — — –20 –20 nAdc μAdc 1. FR– 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Order this document by BCW61BLT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW61BLT1 BCW61CLT1 BCW61DLT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER