BCW61DLT1 (1) datasheet pdf

LESHAN RADIO COMPANY, LTD. M10–1/6 1 3 2 General Purpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO – 32Vdc Collector–Base VoltageV CBO – 32Vdc Emitter–Base VoltageV EBO – 5.0Vdc Collector Current — ContinuousI C – 100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –2.0 mAdc, I B = 0 ) V (BR)CEO – 32—Vdc Emitter–Base Breakdown Voltage (I E = –1.0 μAdc, I C = 0) V (BR)EBO – 5.0—Vdc Collector Cutoff CurrentI CES (V CE = –32 Vdc, )—–20nAdc (V CE = –32 Vdc, T A = 150°C)—–20μAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW61BLT1 BCW61CLT1 BCW61DLT1 2 EMITTER 3 COLLECTOR 1 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB)

Specifications