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BCW65, BCW66 1Jul-10-2001 NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP) 1 2 3 VPS05161 TypeMarkingPin ConfigurationPackage BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H EAs EBs ECs EFs EGs EHs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BCW65BCW66 Unit Collector-emitter voltage V CEO 3245V Collector-base voltage V CBO 6075 Emitter-base voltage V EBO 55 DC collector current I C 800mA Peak collector current I CM 1A Base currentmA100 I B Peak base current I BM 200 Total power dissipation, T S = 79 °CP tot 330mW Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 215K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance