BCW65ALT1 datasheet pdf

General Purpose Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 32Vdc Collector – Base VoltageV CBO 60Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 800mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R qJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient R qJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BCW65ALT1 = EA ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) V (BR)CEO 32——Vdc Collector – Emitter Breakdown Voltage (I C = 10 mAdc, V EB = 0) V (BR)CES 60——Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 5.0——Vdc Collector Cutoff Current (V CE = 32 Vdc, I E = 0) (V CE = 32 Vdc, I E = 0, T A = 150°C) I CES — — — — 20 20 nAdc μAdc Emitter Cutoff Current (V EB = 4.0 Vdc, I C = 0) I EBO ——20nAdc 1. FR– 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Order this document by BCW65ALT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW65ALT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER