BCW65ALT1 (1) datasheet pdf

LESHAN RADIO COMPANY, LTD. M11–1/2 1 3 2 General Purpose Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO 32Vdc Collector–Base VoltageV CBO 60Vdc Emitter–Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 800mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW65ALT1 = EA ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V (BR)CEO 32——Vdc (I C = 10mAdc, I B = 0 ) Collector–Emitter Breakdown Voltage V (BR)CES 60——Vdc (I C = 10 μAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E = 10 μAdc, I C = 0) V (BR)EBO 5.0——Vdc Collector Cutoff CurrentI CES (V CE = 32 Vdc, I E = 0 )——20nAdc (V CE = 32 Vdc, I E = 0 , T A = 150°C)——20μAdc Emitter Cutoff Current (V EB = 4.0 Vdc, I C = 0) I EBO ——20nAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW65ALT1 2 EMITTER 3 COLLECTOR 1 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB)

Specifications