BCW65C datasheet pdf

BCW65C BCW65C NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. C E B SOT-23 Mark: ED Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage32V V CBO Collector-Base Voltage60V V EBO Emitter-Base Voltage5.0V I C Collector Current - Continuous1.0A T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits *BCW65C P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW / ° C R θ JA Thermal Resistance, Junction to Ambient357 ° C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation

Specifications