BCW65C datasheet pdf

BCW65C datasheet pdf PDF Viewer

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BCW65C datasheet pdf

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BCW65C BCW65C NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. C E B SOT-23 Mark: ED Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage32V V CBO Collector-Base Voltage60V V EBO Emitter-Base Voltage5.0V I C Collector Current - Continuous1.0A T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits *BCW65C P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW / ° C R θ JA Thermal Resistance, Junction to Ambient357 ° C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation

Specifications
BCW65C BCW65C NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. C E B SOT-23 Mark: ED Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage32V V CBO Collector-Base Voltage60V V EBO Emitter-Base Voltage5.0V I C Collector Current - Continuous1.0A T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits *BCW65C P D Total Device Dissipation Derate above 25 ° C 350 2.8 mW mW / ° C R θ JA Thermal Resistance, Junction to Ambient357 ° C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Discrete POWER & Signal Technologies ã1997 Fairchild Semiconductor Corporation