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1 ) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 42 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BCW 65, BCW 66General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung250 mW Plastic caseSOT-23 Kunststoffgehäuse(TO-236) Weight approx. – Gewicht ca.0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B2 = E3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25C)Grenzwerte (T A = 25C) BCW 65BCW 66 Collector-Emitter-voltageB openV CE0 32 V45 V Collector-Base-voltageE openV CB0 60 V75 V Emitter-Base-voltageC openV EB0 5 V Power dissipation – VerlustleistungP tot 250 mW 1 ) Collector current – Kollektorstrom (DC)I C 800 mA Peak Collector current – Kollektor-SpitzenstromI CM 1000 mA Base current – Basis-SpitzenstromI B 100 mA Peak Base current – Basis-SpitzenstromI BM 200 mA Junction temperature – SperrschichttemperaturT j 150C Storage temperature – LagerungstemperaturT S - 65...+ 150C Characteristics (T j = 25C)Kennwerte (T j = 25C) Min.Typ.Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, V CB = 32 V BCW 65 I CB0 ––20 nA I E = 0, V CB = 32 V, T j = 150CI CB0 ––20 A I E = 0, V CB = 45 V BCW 66 I CB0 ––20 nA I E = 0, V CB = 45 V, T j = 150CI CB0 ––20 A Emitter-Base cutoff current – Emitterreststrom I C = 0, V EB = 4 VI EB0 ––20 nA