BCW66G datasheet pdf

©2002 Fairchild Semiconductor CorporationRev. A1, August 2002 BCW66G Absolute Maximum Ratings * T C =25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T C =25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage45V V CBO Collector-Base Voltage75V V EBO Emitter-Base Voltage5V I C Collector Current- Continuous1A T J , T STG Operating and Storage Junction Temperature Range- 55 ~ +150°C SymbolParameterTest ConditionMin.Typ.Max.Units BV CBO Collector-Base Breakdown VoltageI C = 10μA75V BV CEO Collector-Emitter Breakdown Voltage I C = 10mA45V BV EBO Emitter-Base Breakdown VoltageI E = 10μA5V I CES Collector Cut-off CurrentV CB = 45V, I E = 0 V CB = 45V, I E = 0 T A = 150°C 20nA 20μA I EBO Emitter Cut-off CurrentV EB = 4V20nA h FE DC Current GainV CE = 10V, I C = 100μA V CE = 1V, I C = 10mA V CE = 1V, I C = 100mA V CE = 2V, I C = 500mA 50 110 160 60 400 V CE (sat)Collector-Emitter Saturation VoltageI C = 100mA, I B = 10mA I C = 500mA, I B = 50mA 0.3 0.7 V V BE (sat)Base-Emitter Saturation VoltageI C = 500mA, I B = 50mA2V C obo Output CapacitanceV CB = 10V, f = 1MHz12pF C ibo Input CapacitanceV EB = 0.5V, f = 1MHz80pF f T Current gain Bandwidth ProductV CE = 10V, I C = 20mA, f = 100MHz 100MHz NFNoise FigureV CE = 5V, I C = 0.2mA, R S = 1kΩ, f = 1KHz, BW = 200Hz 10dB t on Turn-On TimeI B1 = I B2 = 15mA I C = 150mA, R L = 150Ω 100ns t off Turn-Off Time400 BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 Mark: EG

Specifications