BCW68G datasheet pdf

BCW68G — PNP General-Purpose Amplifier © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BCW68G Rev. 1.1.01 March 2014 BCW68G PNP General-Purpose Amplifier Ordering Information Absolute Maximum Ratings (1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Part NumberMarkingPackagePacking Method BCW68GDGSOT-23 3LTape and Reel SymbolParameterValueUnit V CEO Collector-Emitter Voltage-45V V CBO Collector-Base Voltage-60V V EBO Emitter-Base Voltage-5V I C Collector Current - Continuous-800mA T J , T STG Junction and Storage Temperature Range-55 to +150°C SOT-23 Mark: DG C B E Description This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63.

Specifications