BCW68GLT1 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistor PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO –45Vdc Collector–Base VoltageV CBO –60Vdc Emitter–Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –800mAdc DEVICE MARKING BCW68GLT1 = DH THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR-5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to AmbientR θJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mAdc, I B = 0)V (BR)CEO –45——Vdc Collector–Emitter Breakdown Voltage (I C = –10 μAdc, V EB = 0)V (BR)CES –60——Vdc Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0)V (BR)EBO –5.0——Vdc Collector Cutoff Current (V CE = –45 Vdc, I E = 0) (V CE = –45 Vdc, I B = 0, T A = 150°C) I CES — — — — –20 –10 nAdc μAdc Emitter Cutoff Current (V EB = –4.0 Vdc, I C = 0)I EBO ——–20nAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Thermal Clad is a trademark of the Bergquist Company Order this document by BCW68GLT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW68GLT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER

Specifications