BCW68GLT1 (1) datasheet pdf

LESHAN RADIO COMPANY, LTD. M12–1/2 1 3 2 General Purpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO – 45Vdc Collector–Base VoltageV CBO – 60Vdc Emitter–Base VoltageV EBO – 5.0Vdc Collector Current — ContinuousI C – 800mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW68GLT1 = DH ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mAdc, I B = 0 )V (BR)CEO – 45——Vdc Collector–Emitter Breakdown Voltage (I C = –10 μAdc, V EB = 0 )V (BR)CES – 60——Vdc Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0)V (BR)EBO – 5.0——Vdc Collector Cutoff CurrentI CES (V CE = –45 Vdc, I E = 0 )——– 20nAdc (V CE = –45 Vdc, I B = 0 , T A = 150°C)——– 10μAdc Emitter Cutoff Current (V EB = – 4.0 Vdc, I C = 0)I EBO ——– 20nAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW68GLT1 2 EMITTER 3 COLLECTOR 1 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB)

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