BCW70LT1 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO –45Vdc Emitter–Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –100mAdc DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR-5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to AmbientR θJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –2.0 mAdc, I B = 0)V (BR)CEO –45—Vdc Collector–Emitter Breakdown Voltage (I C = –100 μAdc, V EB = 0)V (BR)CES –50—Vdc Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0)V (BR)EBO –5.0—Vdc Collector Cutoff Current (V CB = –20 Vdc, I E = 0) (V CB = –20 Vdc, I E = 0, T A = 100°C) I CBO — — –100 –10 nAdc μAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Thermal Clad is a trademark of the Bergquist Company Order this document by BCW69LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW69LT1 BCW70LT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER

Specifications