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BCW71 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T A =25°°C) • Refer to KST2222 for graphs ELECTRICAL CHARACTERISTICS (T A =25°°C) CharacteristicSymbolRatingUnit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature V CBO V CEO V EBO I C P C T STG 50 45 5 100 350 150 V V V mA mW °C CharacteristicSymbolTest ConditionsMinTypMaxUnit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figures BV CBO BV CEO BV CES BV EBO I CBO h FE V CE (sat) V BE (sat) V BE (on) f T C OB NF I C =10μA, I E =0 I C =2mA, I B =0 I C =2mA, V EB =0 I E =10μA, I C =0 V CB =20V, I E =0 V CE =5V, I C =2mA I C =10mA, I B =0.5mA I C =50mA, I B =2.5mA I C =50mA, I B =2.5mA I C =2mA, V CE =5V V CE =5V, I C =10mA f=35MHz V CB =10V, I E =0 f=1MHz V CE =5V, I C =2.0mA R G =2KΩ, f=1KHz 50 45 45 5 110 0.6 0.21 0.85 300 100 220 0.25 0.75 4 10 V V V V nA V V V V MHz pF dB SOT-23 1. Base 2. Emitter 3. Collector 1999 Fairchild Semiconductor Corporation Rev. B