BCWDLT1 datasheet pdf

LESHAN RADIO COMPANY, LTD. M9–1/6 1 3 2 General Purpose Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO 32Vdc Collector–Base VoltageV CBO 32Vdc Emitter–Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 2.0mAdc, I E = 0 ) V (BR)CEO 32—Vdc Emitter–Base Breakdown Voltage (I E = 1.0 μAdc, I C = 0) V (BR)EBO 5.0—Vdc Collector Cutoff CurrentI CES (V CE = 32 Vdc, )—20nAdc (V CE = 32 Vdc, T A = 150°C)—20μAdc Emitter Cutoff Current (I EB = 4.0 Vdc, I C = 0) I EBO —20nAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BCW60ALT1 BCW60BLT1 BCW60DLT1 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 2 EMITTER 3 COLLECTOR 1 BASE

Specifications