BCX12 datasheet pdf

Semiconductor Group1 NPN Silicon AF Switching Transistor BCX 12 5.91 Maximum Ratings TypeOrdering CodeMarking Package 1) Pin Configuration BCX 12Q62702-C25BCX 12TO-92 CBE 123 ParameterSymbolValuesUnit Collector-emitter voltageV CE0125V Collector-base voltageVCB0125 Emitter-base voltageV EB05 Collector currentI C800mA Peak collector currentI CM1A Base currentI B100mA Peak base currentI BM200 Total power dissipation,T C=66 ̊CPtot625mW Junction temperatureT j150 ̊C Storage temperature rangeT stg– 65 ... + 150 Thermal Resistance Junction - ambientR th JA≤ 200K/W Junction - case 2) Rth JC≤ 135 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. lFor general AF applications lHigh breakdown voltage lLow collector-emitter saturation voltage lComplementary type: BCX 13 (PNP) 1 2 3

Specifications