BCX19 (1) datasheet pdf

©2002 Fairchild Semiconductor CorporationRev. A1, August 2002 BCX19 Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted Thermal Characteristics T A =25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage45V V CBO Collector-Base Voltage50V V EBO Emitter-Base Voltage5.0V I C Collector current- Continuous500mW T J , T stg Junction and Storage Temperature-55 ~ +150°C SymbolParameterTest ConditionMin.Typ.Max.Units Off Characteristics V (BR)CEO Collector-Emitter Breakdown VoltageI C = 10mA, I B = 045V V (BR)CES Collector-Emitter Breakdown VoltageI C = 10μA, I C = 050V I CBO Collector Cutoff CurrentV CB = 20V, I E = 0 V CB = 20V, I E = 0, T A = 150°C 100 5.0 nA μA I EBO Emitter Cutoff CurrentV EB = 5.0V, I C = 010μA On Characteristics h FE DC Current GainI C = 100mA, V CE = 1.0V I C = 300mA, V CE = 1.0V I C = 500mA, V CE = 1.0V 100 70 40 600 V CE(sat) Collector-Emitter Saturation VoltageI C = 500mA, I B = 50mA0.62V V BE(on) Base-Emitter On VoltageI C = 500mA, V CE = 1.0V1.2V SymbolParameterMax.Units P D Total Device Dissipation Derate above 25°C 300 2.4 mW mW/°C R θJA Thermal Resistance, Junction to Ambient417°C/W BCX19 NPN Medium Power Transistor • This device is designed for general purpose amplifiers. • Sourced from process 38. SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 Mark: U1

Specifications