BCX41 datasheet pdf

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 ñOCTOBER 1995 J PARTMARKING DETAIL ñ EKABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V CES 125 V Collector-Emitter Voltage V CEO 125 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 1A Continuous Collector Current I C 800 mA Base Current I B 100 mA Power Dissipation at T amb =25∞C P TOT 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 ∞C ELECTRICAL CHARACTERISTICS (at T amb = 25∞C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Cut-OffCurrent I CES 10010 nA μ A V CE =100V V CE =100V, T amb =150∞C Collector Cut-OffCurrent I CEX 1075 μ A μ A V CE =100V,V BE =0.2V,T amb =85∞C V CE =100V,V BE =0.2V, T amb =125∞C Emitter Cut-OffCurrent I EBO 100 nA V EB =4V Collector-EmitterSaturation Voltage V CE(sat) 0.9 V I C =300mA, I B =30mA * Base-EmitterSaturation Voltage V BE(sat) 1.4 V I C =300mA, I B =30mA * Static ForwardCurrent Transfer Ratio h FE 256340 I C =10 0μ A, V CE =1V I C =100mA, V CE =1V * I C =200mA, V CE =1V * Transition Frequency f T 100 MHz I C =10mA, V CE =5V f =20MHz Output Capacitance C obo 12 pF V CB =10V, I E =I e =0, f =1MHz * Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle 2% BCX41 1 3 2 3 - 33

Specifications