BCX56 (1) datasheet pdf

MAXIMUM RATINGS(T A =25∞C) BCX54 BCX55 BCX56UNITS Collector-Base VoltageV CBO 4560100V Collector-Emitter VoltageV CEO 456080V Emitter-Base VoltageV EBO 5.0V Collector CurrentI C 1.0A Peak Collector CurrentI CM 1.5A Base CurrentI B 100mA Peak Base CurrentI BM 200mA Power DissipationP D 1.2W Operating and Storage Junction TemperatureT J ,T stg -65 to +150∞C Thermal ResistanceΘ JA 104∞C/W ELECTRICAL CHARACTERISTICS: (T A =25∞C unless otherwise noted) SYMBOLTEST CONDITIONSMINTYPMAXUNITS I CBO V CB =30V100nA I CBO V CB =30V, T A =125∞C10μA I EBO V EB =5.0V100nA BV CBO I C =100μA (BCX54)45V BV CBO I C =100μA (BCX55)60V BV CBO I C =100μA (BCX56)100V BV CEO I C =10mA (BCX54)45V BV CEO I C =10mA (BCX55)60V BV CEO I C =10mA (BCX56)80V V CE(SAT) I C =500mA, I B =50mA0.5V V BE(ON) V CE =2.0V, I B =500mA1.0V h FE V CE =2.0V, I C =5.0mA63 h FE V CE =2.0V, I C =150mA63250 h FE V CE =2.0V, I C =150mA (BCX54-10, BCX55-10, BCX56-10)63160 h FE V CE =2.0V, I C =150mA (BCX54-16, BCX55-16, BCX56-16)100250 h FE V CE =2.0V, I C =500mA40 f T V CE =5.0V, I C =10mA, f=100MHz130MHz BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE Central Semiconductor Corp. TM R1 ( 18-December 2001) DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.

Specifications