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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORISSUE 2 – FEBRUARY 1995 J FEATURES* High gain and low saturation voltages COMPLEMENTARY TYPE – BCX69 PARTMARKING DETAIL – BCX68 – CE BCX68-16 – CCBCX68-25 – CD ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 25 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 2A Continuous Collector Current I C 1A Power Dissipation at T amb =25°C P tot 1W Operating and Storage Temperature Range T j :T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-BaseBreakdown voltage V (BR)CBO 25 V I C =100 μ A Collector-EmitterBreakdown Voltage V (BR)CEO 20 V I C =10mA Emitter-BaseBreakdown Voltage V (BR)EBO 5V I E =100 μ A Collector Cut-OffCurrent I CBO 0.110 μ A μ A V CB =25V V CB =25V, T a =150°C Emitter Cut-Off Current I EBO 10 μ A V EB =5V Collector-EmitterSaturation Voltage V CE(sat) 0.5 V I C =1A, I B =100mA* Base-Emitter Turn-OnVoltage V BE(on) 1.0 V I C =1A, V CE =1V* Static Forward CurrentTransfer Ratio h FE BCX68-16BCX68-25 508560100160 250 375250400 I C =5mA, V CE =10V I C =500mA, V CE =1V I C =1A, V CE =1V* I C =500mA, V CE =1V* I C =500mA, V CE =1V Transition Frequency f T 100 MHz I C =100mA, V CE =5V, f=100MHz Output Capacitance C obo 25 pF V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width=300 μ s. Duty cycle ≤ 2% For typical characteristics graphs see FMMT449 datasheet. BCX68 C C B E SOT89 3 - 36